Fin field-effect transistor semiconductor device and method of forming the same
AssigneeTexas Instruments Incorporated
InventorsBhaskar Srinivasan, Walter Scott Idol, Ming-Yeh Chuang, Brian Goodlin
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Abstract
A fin field-effect transistor (“FinFET”) semiconductor device and method of forming the same. In one example, a semiconductor fin is formed over a semiconductor substrate. A conformal dielectric layer is formed on a top and side surfaces of the fin. A doped semiconductor layer is formed over the conformal dielectric layer, the doped semiconductor layer including a dopant. The doped semiconductor layer is heated thereby driving the dopant through the conformal dielectric layer and forming a doped region of the fin.
Claims17
A method of forming an integrated circuit, comprising:
- forming a semiconductor fin over a semiconductor substrate;
- forming a conformal dielectric layer on a top and side surfaces of the fin;
- forming a doped semiconductor layer over the conformal dielectric layer, the doped semiconductor layer including a dopant;
- heating the doped semiconductor layer thereby driving the dopant through the conformal dielectric layer thereby forming a doped region of the fin;
- and
- forming an undoped semiconductor layer over the doped semiconductor layer and then annealing the doped and undoped semiconductor layers.
A method of forming a semiconductor device, comprising:
- forming a fin above a substrate;
- forming a thermal oxide layer over a top surface and sidewalls of the fin;
- forming a doped layer over the thermal oxide layer, the thermal oxide layer being configured to control a dopant diffusion of the doped layer into the fin;
- and
- forming an undoped polysilicon layer over the doped layer,
- wherein a dopant in the doped layer is diffused into the fin through the thermal oxide layer by a thermal annealing process at 900° C. to 1200° C. for 20 to 50 minutes.
A method of forming a semiconductor device, comprising:
- forming a fin above a substrate;
- forming a thermal oxide layer over a top surface and sidewalls of the fin;
- forming a doped layer over the thermal oxide layer, the thermal oxide layer being configured to control a dopant diffusion of the doped layer into the fin;
- and
- forming an undoped polysilicon layer over the doped layer,
- wherein a doping density of the doped layer at the top surface as compared to the sidewalls is within 20 percent.
Dependencies are inferred from the claim text.