H10P 32/1412
Through the applied layer
Official title: {through the applied layer}
H10P32/1412 (Through the applied layer) appears on 179 US grants and 158 published applications in this corpus.
Search patents in H10P- Granted patents
- 179
- Published applications
- 158
- Assignees
- 88
- Inventors
- 362
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 5 | 4 |
| 2003 | 3 | 0 |
| 2004 | 1 | 6 |
| 2005 | 5 | 7 |
| 2006 | 5 | 2 |
| 2007 | 3 | 4 |
| 2008 | 3 | 9 |
| 2009 | 5 | 4 |
| 2010 | 4 | 3 |
| 2011 | 6 | 12 |
| 2012 | 5 | 7 |
| 2013 | 12 | 8 |
| 2014 | 8 | 9 |
| 2015 | 9 | 4 |
| 2016 | 5 | 13 |
| 2017 | 15 | 20 |
| 2018 | 17 | 15 |
| 2019 | 11 | 9 |
| 2020 | 13 | 8 |
| 2021 | 4 | 2 |
| 2022 | 3 | 4 |
| 2023 | 4 | 4 |
| 2024 | 2 | 0 |
| 2025 | 1 | 2 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Conformal boron doping method for three-dimensional structure and use thereof28 Apr 2026US 12,615,977 B2Beijing Superstring Academy of Memory Technology
- Fin field-effect transistor semiconductor device and method of forming the same23 Sep 2025US 12,424,443 B2Texas Instruments Incorporated
- Method for providing doped silicon using a diffusion barrier layer22 Oct 2024US 12,125,705 B2Lam Research Corporation
- Method for manufacturing a doped zone of a microelectronic device26 Mar 2024US 11,942,323 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for forming barrier layer and method for manufacturing semiconductor device28 Nov 2023US 11,830,738 B2ASM IP Holding B. V.
- Conformal boron doping method for three-dimensional structure and use thereof8 May 2025US 2025/0149339 A1Beijing Superstring Academy of Memory Technology
- Method for providing doped silicon using a diffusion barrier layer6 Feb 2025US 2025/0046613 A1Lam Research Corporation
- Semiconductor doping method and an intermediate semiconductor device21 Dec 2023US 2023/0411153 A1Beneq Oy
- Back-contact solar cell, and production thereof19 Oct 2023US 2023/0335663 A1EnPV GmbH
- Fin field-effect transistor semiconductor device and method of forming the same8 Jun 2023US 2023/0178372 A1Texas Instruments Incorporated
Most cited
By later US patents
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Method for forming silicon oxide cap layer for solid state diffusion process475US 9,607,837 B1ASM IP Holding B. V. · 2017
- Method of fabricating a MOS device having a gate-side air-gap structure136US 5,736,446 APowerchip Semiconductor Corp. · 1998
- Method for doping non-planar transistors134US 8,114,761 B2APPLIED Materials.Inc. · 2012
- Method of channel doping using diffusion from implanted polysilicon104US 5,918,129 AAdvanced Micro Devices, Inc. · 1999