Back-contact solar cell, and production thereof
AssigneeEnPV GmbH
InventorErik HOFFMANN
Life of this patent
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AssigneeEnPV GmbH
InventorErik HOFFMANN
Estimating the term…
The invention relates to a method for producing a back-contact solar cell (10), and to a back-contact solar cell (10) comprising a semiconductor substrate (12), in particular a silicon wafer, comprising a front side (16) and a back side (14), the solar cell (10) comprising electrodes (36) of a first polarity and electrodes (38) of a second polarity on the back side, characterized in that that the electrodes (36) of the first polarity are located on a highly doped silicon layer (20) of the first polarity, the highly doped silicon layer (20) being located on a first passivation layer (18) located on the semiconductor substrate, and the electrodes (38) of the second polarity directly electrically and mechanically contacting the semiconductor substrate (12) via highly doped base regions (30) of the second polarity of the semiconductor substrate (12).
-17. (canceled)
A back-contact solar cell comprising a semiconductor substrate, in particular a silicon wafer, comprising a front side and a back side, the solar cell comprising electrodes of a first polarity and electrodes of a second polarity on the back side, the electrodes of the first polarity being arranged on a highly doped silicon layer of the first polarity, the highly doped silicon layer being arranged on a first passivation layer arranged on the semiconductor substrate, and the electrodes of the second polarity directly electrically and mechanically contacting the semiconductor substrate via highly doped base regions of the second polarity of the semiconductor substrate, characterized in that the highly doped base regions of the second polarity are formed within the doped base regions of the second polarity on the back side of the solar cell, a dopant concentration in the highly doped base regions being higher than a dopant concentration in the doped base regions, and the dopant concentration in the highly doped base regions being higher than a dopant concentration of a doped region on the front side of the solar cell.
Dependencies are inferred from the claim text.