Semiconductor doping method and an intermediate semiconductor device

A method for doping a semiconductor, the method comprising an initial step where a semiconductor substrate comprising a surface is placed into a deposition tool, wherein the method comprises, in the following order, the steps of:

• a) depositing a separation layer on the surface of the semiconductor substrate in a separation layer deposition step,
• b) depositing a mixture material source layer in a mixture material source layer deposition step, in which the mixture material source layer comprising a mixture material is deposited on the separation layer, the mixture material of the mixture material source layer comprising a dopant substance, and
• c) annealing the semiconductor substrate, the separation layer, and the mixture material source layer in an annealing step, in which the substrate, the separation layer, and the mixture material source layer are heated to an elevated temperature to arrange diffusion of a dopant substance from the mixture material source layer to the substrate and to the separation layer.

An intermediate semiconductor device comprising a semiconductor substrate comprising a surface, wherein the intermediate semiconductor device comprises a dopant source layer stack comprising:

• a) a separation layer on the surface of a substrate,
• b) a mixture material source layer on the separation layer, the mixture material source layer comprising a mixture material comprising a dopant substance, and the atomic ratio of the dopant substance in the mixture material source layer is arranged to be 0.001 at. %-10 at. %.