Method for doping non-planar transistors
AssigneeApplied Materials, Inc.
InventorsTushar V. Mandrekar, Shankar Venkataraman, Zhong Qiang Hua, Manuel A. Hernandez
Life of this patent
Estimating the term…
Abstract
Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
Claims10
A method of doping a non-planar structure formed over a substrate, the method comprising:
- positioning the substrate having a non-planar structure formed thereon in a substrate processing chamber, the non-planar structure having raised patterned silicon features formed above a lower surface of the substrate;
- depositing a doped conformal silicate glass layer over the raised silicon features using an SACVD process at a deposition rate of between 200-400 Angstroms per minute ° C.;
- diffusing dopant from the doped conformal silicate glass layer into the raised patterned silicon features using an RTP or laser annealing process;
- and removing the doped conformal silicon glass layer from the substrate.
A method of doping a non-planar structure formed over a substrate, the method comprising:
- positioning the substrate having a non-planar structure formed thereon in a substrate processing chamber, the non-planar structure having raised patterned silicon features formed above a lower surface of the substrate;
- depositing a conformal silicate glass layer doped with boron or phosphorus over the raised silicon features using a thermally driven SACVD process at a deposition temperature of less than 350° C., a pressure of between 100-600 Torr, and a deposition rate of between 200-400 Angstroms per minute;
- diffusing dopant from the doped conformal silicate glass layer into the raised patterned silicon features using an RTP process;
- and removing the doped conformal silicon glass layer from the substrate.
Dependencies are inferred from the claim text.