Method for providing doped silicon using a diffusion barrier layer

A method for doping a substrate, comprising:

• forming a silicon oxide diffusion barrier layer on a surface of the substrate, wherein the silicon oxide diffusion barrier layer is thicker over an outer edge of the substrate than over a center of the substrate;
• depositing at least one dopant layer over the silicon oxide diffusion barrier layer;
• depositing a cap layer over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion barrier layer, the at least one dopant layer, and the cap layer;
• annealing the stack;
• and
• removing the cap layer, the at least one dopant layer, and the silicon oxide diffusion barrier layer.

A method for doping a substrate, comprising:

• forming a silicon oxide diffusion barrier layer on a surface of the substrate by an atomic layer deposition process comprising a plurality of cycles, each cycle comprising
• flowing a first reactant gas comprising a silicon containing precursor to deposit a silicon containing precursor layer on the substrate,
• stopping the flow of the first reactant gas,
• flowing a second reactant gas,
• providing an RF power to transform the second reactant gas into a plasma,
• transforming the silicon containing precursor layer on the substrate to silicon oxide, and
• stopping the flow of the second reactant gas;
• depositing at least one dopant layer over the silicon oxide diffusion barrier layer;
• depositing a cap layer over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion barrier layer, the at least one dopant layer, and the cap layer;
• annealing the stack;
• and
• removing the cap layer, the at least one dopant layer, and the silicon oxide diffusion barrier layer.