Methods for forming doped silicon oxide thin films
AssigneeASM International N.V.
InventorsNoboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
Claims17
A method for depositing doped silicon oxide on a substrate by an atomic layer deposition (ALD) process, the ALD process comprising at least one doped silicon oxide deposition cycle, wherein a doped silicon oxide deposition cycle comprises:
- contacting the substrate with a silicon precursor;
- contacting the substrate with a dopant precursor;
- and
- contacting the substrate with a reactive species such that a doped silicon oxide is formed.
A method of doping a silicon substrate comprising:
- treating the substrate surface with a plasma;
- depositing a solid state diffusion (SSD) layer comprising a dopant over the Si substrate surface by an atomic layer deposition process comprising:
- contacting the substrate with a silicon precursor;
- contacting the substrate with a dopant precursor;
- and
- subsequently contacting the substrate with a reactive species;
- depositing a cap layer over the SSD layer;
- and annealing the substrate to drive dopant from the SSD layer into the underlying silicon substrate.
Dependencies are inferred from the claim text.