Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs
AssigneeArizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University
InventorsJohn Kouvetakis, Matthew Bauer, John Tolle, Candi Cook
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Abstract
A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
Claims25
A method for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH3Br with [(CH3)3Si]3E under conditions whereby E(GeH3)3 is obtained.
A method for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH3Br with [(CH3)3Si]3E to obtain E(GeH3)3 according to the formula:
- 3 GeH3Br+[(CH3)3Si)]3E→3(CH3)3SiBr+(GeH3)3E
A method for doping a region of a semiconductor material in a chemical vapor deposition reaction chamber, the method comprising introducing into the chamber a gaseous precursor having the formula E(GeH3)3, wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
A method for depositing a doped epitaxial Ge—Sn layer on a substrate in a chemical vapor deposition reaction chamber, the method comprising:
- introducing into the chamber a gaseous precursor comprising SnD4 mixed in H2 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate;
- and
- introducing into the chamber a gaseous precursor having the formula E(GeH3)3, wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
A method for forming a Group IV semiconductor film, the method comprising
- forming the Group IV semiconductor film by a chemical vapor deposition method, wherein the Group IV semiconductor film is doped with impurities comprising an element E at a concentration ranging from about 1021 atoms/cm3 to about several percent using a precursor having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), phosporous (P) and antimony (Sb).
A method for forming a Group IV semiconductor film, the method comprising:
- forming the Group IV semiconductor film by a chemical vapor deposition method;
- and
- while forming the Group IV semiconductor film, doping the film with impurities comprising an element B at a concentration ranging from about 1021 atoms/cm3 to about 3 at. % using a precursor having the formula E(GeH3)3 wherein B is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P).
A method of preparing (E)Hx (GeH3)3-x, where x=1 or 2 and E is selected from the group consisting of P, As, Sb, the method comprising reacting inorganic or organometallic compounds of the E element with an alkali germyl or a halogenated germane.
Dependencies are inferred from the claim text.