H10P 32/19
Diffusion sources
Official title: {Diffusion sources}
H10P32/19 (Diffusion sources) appears on 193 US grants and 199 published applications in this corpus.
Search patents in H10P- Granted patents
- 193
- Published applications
- 199
- Assignees
- 102
- Inventors
- 449
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 5 | 2 |
| 2003 | 2 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 2 |
| 2006 | 2 | 0 |
| 2007 | 1 | 4 |
| 2008 | 0 | 2 |
| 2009 | 0 | 8 |
| 2010 | 2 | 9 |
| 2011 | 6 | 14 |
| 2012 | 8 | 18 |
| 2013 | 11 | 21 |
| 2014 | 11 | 24 |
| 2015 | 19 | 26 |
| 2016 | 13 | 18 |
| 2017 | 19 | 15 |
| 2018 | 15 | 14 |
| 2019 | 10 | 5 |
| 2020 | 8 | 4 |
| 2021 | 3 | 0 |
| 2022 | 1 | 2 |
| 2023 | 0 | 3 |
| 2024 | 1 | 2 |
| 2025 | 0 | 4 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions7 Apr 2026US 12,598,927 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Method of manufacturing semiconductor device25 Jun 2024US 12,020,935 B2Mitsubishi Electric Corporation
- Methods for forming doped silicon oxide thin films12 Apr 2022US 11,302,527 B2ASM International N.V.
- Diffusing agent composition and method of manufacturing semiconductor substrate14 Sep 2021US 11,120,993 B2Tokyo Ohka Kogyo.Co., Ltd.
- Method and apparatus for depositing a monolayer on a three dimensional structure8 Jun 2021US 11,031,247 B2Varian Semiconductor Equipment Associates, Inc.
- N-dipole material for stacked transistors20 Nov 2025US 2025/0357124 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diffusing agent composition, and method for manufacturing semiconductor substrate6 Nov 2025US 2025/0343042 A1Tokyo Ohka Kogyo.Co., Ltd.
- Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions8 May 2025US 2025/0149338 A1The Government of the United States of America, as represented by the Secretary of the Navy
- N-type of transition metal dichalcogenide channels via surface charge transfer from a dopant layer1 May 2025US 2025/0140559 A1Samsung Electronics Co., Ltd.
- Method of producing p-type nitride semiconductor14 Nov 2024US 2024/0379362 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Methods for forming doped silicon oxide thin films485US 8,679,958 B2ASM International N.V. · 2014
- Methods for forming doped silicon oxide thin films478US 9,153,441 B2ASM International N.V. · 2015
- Methods for forming doped silicon oxide thin films475US 9,368,352 B2ASM International N.V. · 2016
- Methods for forming doped silicon oxide thin films471US 9,564,314 B2ASM International N.V. · 2017
- Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors438US 9,997,357 B2Lam Research Corporation · 2018