US 11,120,993 B2 · Diffusing agent composition and method of manufacturing semiconductor substrate

Abstract

A diffusing agent composition that can form a coating film in which the unevenness thereof is lowered, which is uniform and which has excellent stability, and a method of manufacturing a semiconductor substrate in which an impurity diffusing component is diffused into the semiconductor substrate from the coating film formed of the diffusing agent composition. An aliphatic amine which satisfies predetermined conditions is contained as an aliphatic amine compound in a diffusing agent composition including an impurity diffusing component. When the number of primary amino groups included in the amine compound is NA, the number of secondary amino groups included in the compound is NB, and the number of tertiary amino groups included in the amine compound is NC, NA, NB and NC satisfy predetermined formulas.

Claims13

Dependent claims

A diffusing agent composition used for diffusion of an impurity into a semiconductor substrate, the diffusing agent composition comprising:

an impurity diffusing component (A) and an amine compound (B), wherein the diffusing agent composition does not comprise a resin, wherein the amine compound (B) is an aliphatic amine, wherein when a number of primary amino groups included in the amine compound (B) is NA, a number of secondary amino groups included in the amine compound (B) is NB and a number of tertiary amino groups included in the amine compound (B) is NC, NA, NB and NC satisfy formulas (1) and (2) below:
(NB+NC)≥1 (1)
(NA+NB+NC)≥2 (2);
and
wherein when NB+NC<NA, in the amine compound (B), the primary amino groups are bound to an aliphatic hydrocarbon group having 2 or less carbon atoms.

2 more elements

Dependencies are inferred from the claim text.

Diffusing agent composition and method of manufacturing semiconductor substrate

Life of this patent

Diffusing agent composition and method of manufacturing semiconductor substrate

Life of this patent

Abstract

Claims13