Methods for forming doped silicon oxide thin films
AssigneeASM International N.V.
InventorsNoboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
Claims20
A method for depositing doped silicon oxide on a substrate in a reaction chamber comprising at least one doped silicon oxide deposition cycle comprising, in order:
- contacting the substrate with a dopant precursor;
- contacting the substrate with a first reactive species;
- contacting the substrate with a silicon precursor;
- exposing the substrate to a purge gas;
- and
- contacting the substrate with a second reactive species.
Dependencies are inferred from the claim text.