Method of producing p-type nitride semiconductor
AssigneeSumitomo Electric Industries, Ltd.
InventorsKei FUJII, Susumu YOSHIMOTO, Takeshi AOKI, Takuma FUYUKI, Suguru ARIKATA, Kenshi TAKADA
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Abstract
A method of producing a P-type nitride semiconductor includes, in order, applying an SOG solution containing group II atoms on a substrate made of a nitride semiconductor, baking the substrate to form an SOG film, diffusing the group II atoms into the substrate by subjecting the substrate to an annealing treatment under an inert gas atmosphere, and removing the SOG film from the substrate.
Claims19
A method of producing a P-type nitride semiconductor, the method comprising, in order:
- applying an SOG solution containing group II atoms on a substrate made of a nitride semiconductor;
- baking the substrate to form an SOG film;
- diffusing the group II atoms into the substrate by subjecting the substrate to an annealing treatment under an inert gas atmosphere;
- and
- removing the SOG film from the substrate.
A method of producing a P-type nitride semiconductor, the method comprising, in order:
- forming an insulating film on a substrate made of a nitride semiconductor;
- exposing a portion of a surface of the substrate by removing a portion of the insulating film;
- applying an SOG solution containing group II atoms on the exposed surface of the substrate and on the insulating film;
- baking the substrate to form an SOG film;
- diffusing the group II atoms into the substrate by subjecting the substrate to an annealing treatment under an inert gas atmosphere;
- and
- removing the SOG film from the substrate.
Dependencies are inferred from the claim text.