H10P 32/16
Between a solid phase and a liquid phase
Official title: between a solid phase and a liquid phase
H10P32/16 (Between a solid phase and a liquid phase) appears on 112 US grants and 129 published applications in this corpus.
Search patents in H10P- Granted patents
- 112
- Published applications
- 129
- Assignees
- 85
- Inventors
- 318
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 2 | 4 |
| 2004 | 3 | 0 |
| 2005 | 0 | 2 |
| 2006 | 3 | 1 |
| 2007 | 2 | 2 |
| 2008 | 0 | 7 |
| 2009 | 1 | 5 |
| 2010 | 1 | 9 |
| 2011 | 5 | 11 |
| 2012 | 5 | 16 |
| 2013 | 7 | 11 |
| 2014 | 12 | 9 |
| 2015 | 8 | 15 |
| 2016 | 11 | 8 |
| 2017 | 9 | 8 |
| 2018 | 7 | 5 |
| 2019 | 7 | 3 |
| 2020 | 4 | 1 |
| 2021 | 1 | 3 |
| 2022 | 0 | 0 |
| 2023 | 1 | 2 |
| 2024 | 2 | 5 |
| 2025 | 1 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming conductive member and method of forming channel7 Apr 2026US 12,598,926 B2Tokyo Electron Limited
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof17 Feb 2026US 12,557,613 B2
- Substrate processing device and method of manufacturing substrate processing device28 Jan 2025US 12,211,706 B2Tokyo Electron Limited
- Methods for forming charge layers using gas and liquid phase coatings6 Feb 2024US 11,894,232 B2APPLIED Materials.Inc.
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof6 Feb 2024US 11,894,261 B2
- Solar cell and preparation method thereof21 May 2026US 2026/0143825 A1Tongwei Solar (Meishan) Co., Ltd.
- Methods and apparatus to modify carbide surfaces in semiconductor device fabrication processes3 Jul 2025US 2025/0218778 A1Intel Corporation
- Method for treating semiconductor substrate layer and method for preparing solar cell26 Dec 2024US 2024/0429339 A1Anhui Huasun Energy Co., Ltd.
- Nitride semiconductor device, nitride semiconductor substrate, and method of manufacturing nitride semiconductor device17 Oct 2024US 2024/0347343 A1National University Corporation Tokai National Higher Education and Research System
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof5 Sep 2024US 2024/0297070 A1
Most cited
By later US patents
- Method of doping semiconductors546US 8,071,451 B2Axcelis Technologies, Inc. · 2011
- Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface93US 8,890,264 B2Intel Corporation · 2014
- Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors64US 6,695,903 B1Merck Patent GmbH · 2004
- Methods of forming multi-doped junctions on a substrate48US 7,615,393 B1Innovalight, Inc. · 2009
- Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits31US 4,807,022 ARaytheon Company · 1989