Nitride semiconductor device, nitride semiconductor substrate, and method of manufacturing nitride semiconductor device
AssigneeNational University Corporation Tokai National Higher Education and Research System
InventorsManato DEKI, Shun LU, Hiroshi AMANO, Yoshio HONDA, Atsushi TANAKA, Yuta ITO
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Abstract
A technology is provided to form p-type regions and to effectively reduce a contact resistance between the p-type region and an electrode. One embodiment of a nitride semiconductor device manufacturing method may include a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate. The method may include an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.
Claims26
A method of manufacturing a nitride semiconductor device, the method comprising:
- a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate;
- and
- an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.
A nitride semiconductor device comprising:
- a nitride semiconductor substrate having a p-type region exposed on at least a part of its surface;
- an intermediate layer arranged at least in a part of an upper surface of the p-type region and containing magnesium and nitrogen;
- and
- an electrode layer arranged on at least a part of an upper surface of the intermediate layer.
A nitride semiconductor substrate, wherein
- a magnesium concentration distribution in a direction perpendicular to a surface of the nitride semiconductor substrate has a maximum value within a first region from the surface to a depth of 100 nanometers, and
- the maximum value is 1×1020 cm−3 or more.
Dependencies are inferred from the claim text.