Method for treating semiconductor substrate layer and method for preparing solar cell

Abstract

Provided in the present application are a method for treating a semiconductor substrate layer and a method for preparing a solar cell. The method for treating a semiconductor substrate layer comprises a step of providing a monocrystalline silicon wafer, a step of spraying a diffusion liquid onto a surface of the monocrystalline silicon wafer, and a step of annealing the monocrystalline silicon wafer, and further comprises subjecting the monocrystalline silicon wafer to a surface oxidation treatment before spraying the diffusion liquid onto the surface of the monocrystalline silicon wafer, wherein the surface oxidation treatment is used for improving the lyophilicity of the surface of the monocrystalline silicon wafer to the diffusion liquid, so as to improve the uniformity of the annealing treatment of the monocrystalline silicon wafer. The method for treating a semiconductor substrate layer provided in the present application can solve the problem of non-uniform spreading of a diffusion liquid, thereby greatly improving the performance of the semiconductor substrate layer.

Dependencies are inferred from the claim text.