US 8,890,264 B2 · Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Abstract

A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.

Claims13

Dependent claims

A non-planar field effect transistor (FET), comprising:

a source region and a drain region with a III-V semiconductor channel region disposed there between;
a gate dielectric layer disposed over the semiconductor channel region, wherein the gate dielectric layer comprises a metal oxide, and further comprises nitrogen dopants incorporated in the gate dielectric layer, the nitrogen dopants are proximal an interface between the gate dielectric and the III-V semiconductor channel region;
and
a gate electrode disposed over the gate dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/627,971Filed 26 Sep 2012

Published

US 2014/0084387 A127 Mar 2014

Granted

18 Nov 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants
B82Y 10/00
Nanotechnology for information processing, storage or transmission
H10D 30/014
Manufacture or treatment: of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron…
H10D 30/019
Manufacture or treatment: of FETs having stacked nanowire, nanosheet or nanoribbon channels

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Life of this patent

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Life of this patent

Abstract

Claims13