Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors
AssigneeMerck Patent GmbH
InventorsArmin Kübelbeck, Claudia Zielinski, Lilia Heider, Werner Stockum
Life of this patent
Estimating the term…
Abstract
The invention relates to novel boron, phosphorus or boron-aluminium dopant pastes for the production of p, p+ and n, n+ regions in monocrystalline and polycrystalline Si wafers, and of corresponding pastes for use as masking pastes in semiconductor fabrication, power electronics or in photovoltaic applications.
Claims22
A screen-printable dopant paste for the selective patterning and extensive printing of Si wafers to produce p, p+, p++, n, n+, and n++ regions in the Si wafers, said paste comprising:
- a) one or more components with dopant action,
- b) one or more silanes of the formula R1nSi(OR)4−n,
- in which
- R1 is methyl, ethyl or phenyl,
- R is methyl, ethyl, n-propyl or iso-propyl, and
- n is 0,1 or 2,
- c) one or more solvents,
- d) a thickening agent or wetting agent,
- e) optionally an acid and water, and
- f) optionally one or more additives,
- the total composition having impurities in the form of metal ions in respective concentrations of less than 200 ppb,
- wherein said dopant paste contains 0.1-5% by weight of said silanes.
A screen-printable dopant paste for the selective patterning and extensive printing of Si wafers to produce p, p+, p++, n, n+, and n++ regions in the Si wafers, said paste comprising:
- a) one or more components with dopant action,
- b) one or more silanes of the formula R1nSi(OR)4−n,
- in which
- R1 is methyl, ethyl or phenyl,
- R is methyl, ethyl, n-propyl or iso-propyl, and
- n is 0, 1 or 2,
- c) one or more solvents,
- d) a thickening agent or wetting agent,
- e) optionally an acid and water, and
- f) optionally one or more additives,
- the total composition having impurities in the form of metal ions in respective concentrations of less than 200 ppb,
- wherein said one or more components with dopant action is B2O3 or P2O5 and,
- said one or more silanes form an SiO2 matrix wherein the ratio of SiO2 to B2O3 or P2O5 is 10-80% B2O3 or P2O5 in SiO2.
A screen-printable dopant paste for the selective patteming and extensive printing of Si wafers to produce p, p+, p++, n, n+, and n++ regions in the Si wafers, said paste comprising:
- a) one or more components with dopant action,
- b) one or more silanes of the formula R1nSi(OR)4−n,
- in which
- R1 is methyl, ethyl or phenyl,
- R is methyl, ethyl, n-propyl or iso-propyl, and
- n is 0, 1 or 2,
- c) one or more solvents,
- d) a thickening agent or wetting agent,
- e) optionally an acid and water, and
- f) optionally one or more additives,
- the total composition having impurities in the form of metal ions in respective concentrations of less than 200 ppb,
- wherein said dopant paste contains 50-80% by weight of said one or more solvents.
A screen-printable masking paste comprising:
- a) one or more silanes of the formula R1nSi(OR)4−n,
- in which
- R1 is methyl, ethyl or phenyl,
- R is methyl, ethyl, n-propyl or iso-propyl, and
- n is 0, 1 or 2,
- b) one or more solvents,
- c) a thickening agent or wetting agent,
- d) optionally an acid and water, and
- e) optionally one or more additives,
- the total composition having impurities in the form of metal ions in respective concentrations of less than 200 ppb,
- wherein said masking paste contains 0.1-5% by weight of said silanes.
Dependencies are inferred from the claim text.