Method of forming conductive member and method of forming channel

A method of forming a conductive member, the method comprising:

• forming, on a substrate, a first portion by laminating a conductive layer containing a first element and a metal layer containing a second element, which causes an eutectic reaction with the first element, and forming a second portion on the metal layer to form an intermetallic compound, the second portion being constituted by an intermetallic compound formation layer containing a third element that reacts with the second element, which is diffused into the second portion;
• precipitating primary crystals of the first element by adjusting a temperature of the substrate after bringing the first portion into a liquid phase state;
• growing crystal grains of the first element from the precipitated primary crystals by diffusing the second element from the first portion into the second portion, through a chemical potential gradient of the second element between the first portion and the second portion, to increase a ratio of the first element in a crystal state to the first element and the second element in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature;
• and
• turning the first portion, after the diffusion of the second element into the second portion is completed, into the conductive member having the crystal grains of the first element.