H10P 32/12
Between a solid phase and a gaseous phase
Official title: between a solid phase and a gaseous phase
H10P32/12 (Between a solid phase and a gaseous phase) appears on 934 US grants and 889 published applications in this corpus.
Search patents in H10P- Granted patents
- 934
- Published applications
- 889
- Assignees
- 318
- Inventors
- 1,925
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 10 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 7 | 0 |
| 1981 | 5 | 0 |
| 1982 | 1 | 0 |
| 1983 | 5 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 7 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 7 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 6 | 0 |
| 1994 | 3 | 0 |
| 1995 | 6 | 0 |
| 1996 | 16 | 0 |
| 1997 | 6 | 0 |
| 1998 | 7 | 0 |
| 1999 | 25 | 0 |
| 2000 | 35 | 0 |
| 2001 | 17 | 7 |
| 2002 | 27 | 20 |
| 2003 | 21 | 18 |
| 2004 | 10 | 19 |
| 2005 | 7 | 16 |
| 2006 | 8 | 21 |
| 2007 | 13 | 29 |
| 2008 | 16 | 40 |
| 2009 | 17 | 23 |
| 2010 | 31 | 38 |
| 2011 | 28 | 49 |
| 2012 | 33 | 42 |
| 2013 | 26 | 52 |
| 2014 | 44 | 43 |
| 2015 | 52 | 62 |
| 2016 | 48 | 57 |
| 2017 | 64 | 45 |
| 2018 | 42 | 60 |
| 2019 | 38 | 50 |
| 2020 | 53 | 49 |
| 2021 | 40 | 35 |
| 2022 | 33 | 31 |
| 2023 | 22 | 20 |
| 2024 | 25 | 29 |
| 2025 | 17 | 19 |
| 2026 | 5 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Large-area wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including doping of synthesized graphene1 Sep 2026US 12,727,408 B2Destination 2D Inc.
- Deuterium-containing films28 Apr 2026US 12,616,006 B2APPLIED Materials.Inc.
- Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene14 Apr 2026US 12,604,687 B2Destination 2D Inc.
- Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium10 Mar 2026US 12,575,347 B2Kokusai Electric Corporation
- Semiconductor structure and method for fabricating same13 Jan 2026US 12,525,452 B2Changxin Memory Technologies, Inc.
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Incorporation Of Arsenic Dopant In Semiconductor Lattice3 Sep 2026US 2026/0262454 A1UCL Business PLC
- Method for producing light-receiving device3 Sep 2026US 2026/0262457 A1Shin-Etsu Handotai Co., Ltd.
- Transistor device and manufacturing method thereof13 Aug 2026US 2026/0239695 A1ProAsia Semiconductor Corporation
- Cavity contact formation using plasma doping process23 Jul 2026US 2026/0215183 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Method of doping semiconductors546US 8,071,451 B2Axcelis Technologies, Inc. · 2011
- Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors438US 9,997,357 B2Lam Research Corporation · 2018
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003