Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene

A method of accelerated intercalation doping by insertion of dopant atoms, ions, or molecules into layered 2D materials, said method comprising:

• loading single or multiple wafers or substrates into a reactor chamber, wherein the single or multiple wafers or substrates comprise a diameter or side distance in the range of 25 mm to 450 mm, wherein the single or multiple wafers or substrates comprise multi-layer graphene strips define exposed layer edges, wherein the multi-layer graphene strips comprise two or more graphene layers;
• heating the single or multiple wafers or substrates to a temperature of 25° C. to 500° C.;
• creating pressure on the single or multiple wafers or substrates in the range of 2 bar to 500 bar;
• and
• introducing intercalation doping agents into the reactor chamber to insert the intercalation dopants between the two or more graphene layers via the exposed layer edges, wherein:
• said introducing comprises generating an atmosphere comprising dopants within the reactor chamber from a dopant crucible containing the dopants,
• the dopant crucible is located outside of the reactor chamber and the dopant crucible is connected to the reactor chamber, and
• the single or multiple wafers or substrates are each oriented vertically.

A method of accelerated intercalation doping by insertion of dopant atoms, ions, or molecules into layered 2D materials, said method comprising:

• loading single or multiple wafers or substrates into a reactor chamber, wherein the single or multiple wafers or substrates comprise a diameter or side distance in the range of 25 mm to 450 mm, wherein the single or multiple wafers or substrates comprise multi-layer graphene strips define exposed layer edges, wherein the multi-layer graphene strips comprise two or more graphene layers;
• heating the single or multiple wafers or substrates to a temperature of 25° C. to 500° C.;
• creating pressure on the single or multiple wafers or substrates in the range of 2 bar to 500 bar;
• and
• introducing intercalation doping agents into the reactor chamber to insert the intercalation dopants between the two or more graphene layers via the exposed layer edges, wherein:
• said introducing comprises generating an atmosphere comprising dopants within the reactor chamber from a dopant crucible containing the dopants,
• the dopant crucible is located inside the reactor chamber, and
• the single or multiple wafers or substrates are each oriented horizontally and face-up.