Cavity contact formation using plasma doping process
AssigneeApplied Materials, Inc.
InventorsYan Zhang, Vikram M. Bhosle, Shi You, Deven Raj Mittal, Sony Varghese, Kyu-Ha Shim
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Abstract
Approaches herein relate to devices and methods for forming cavity contacts using a plasma doping process. One method may include forming a plurality of alternating first layers and second layers, and forming a source/drain epitaxial material within a trench of the plurality of alternating first layers and second layers. The method may further include forming a cavity in source/drain epitaxial material, and performing a plasma doping process to form a doped area in the source/drain epitaxial material.
Claims20
A method, comprising:
- forming a plurality of alternating first layers and second layers;
- forming a source/drain epitaxial material within a trench of the plurality of alternating first layers and second layers;
- forming a cavity in source/drain epitaxial material;
- and
- performing a plasma doping process to form a doped area in the source/drain epitaxial material.
A method for forming a cavity contact in a semiconductor device, the method comprising:
- forming a plurality of alternating first layers and second layers over a base layer;
- forming a source/drain epitaxial material within a trench formed through the plurality of alternating first layers and second layers;
- etching the source/drain epitaxial material to form a cavity in source/drain epitaxial material;
- performing a plasma doping process following formation of the cavity, wherein the plasma doping process forms a doped area in the source/drain epitaxial material;
- and
- depositing a metal within the cavity, over the doped area in the source/drain epitaxial material.
A method for forming a cavity contact in a semiconductor device, the method comprising:
- forming a plurality of alternating first layers and second layers over a base layer;
- forming a source/drain epitaxial material within the plurality of alternating first layers and second layers;
- forming a trench above the plurality of alternating first layers and second layers, wherein the trench extends to an upper surface of the source/drain epitaxial material;
- etching the source/drain epitaxial material to form a cavity in source/drain epitaxial material;
- performing a plasma doping process following formation of the cavity, wherein the plasma doping process impacts an exposed surface of the source/drain epitaxial material to form a doped area in the source/drain epitaxial material;
- and
- depositing a metal within the cavity and over the doped area in the source/drain epitaxial material.
Dependencies are inferred from the claim text.