H10P 32/1204
From a plasma phase
Official title: {from a plasma phase}
H10P32/1204 (From a plasma phase) appears on 528 US grants and 568 published applications in this corpus.
Search patents in H10P- Granted patents
- 528
- Published applications
- 568
- Assignees
- 141
- Inventors
- 981
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 4 | 0 |
| 1996 | 9 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 27 | 0 |
| 2001 | 11 | 3 |
| 2002 | 16 | 15 |
| 2003 | 13 | 11 |
| 2004 | 6 | 12 |
| 2005 | 5 | 12 |
| 2006 | 5 | 19 |
| 2007 | 11 | 21 |
| 2008 | 14 | 35 |
| 2009 | 12 | 21 |
| 2010 | 27 | 32 |
| 2011 | 22 | 39 |
| 2012 | 25 | 26 |
| 2013 | 19 | 36 |
| 2014 | 26 | 26 |
| 2015 | 34 | 36 |
| 2016 | 26 | 36 |
| 2017 | 36 | 26 |
| 2018 | 22 | 39 |
| 2019 | 28 | 30 |
| 2020 | 32 | 28 |
| 2021 | 24 | 20 |
| 2022 | 20 | 12 |
| 2023 | 8 | 6 |
| 2024 | 9 | 11 |
| 2025 | 8 | 9 |
| 2026 | 2 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Deuterium-containing films28 Apr 2026US 12,616,006 B2APPLIED Materials.Inc.
- Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium10 Mar 2026US 12,575,347 B2Kokusai Electric Corporation
- GaN device with N2 pre-treatment and method of performing N2 pre-treatment19 Aug 2025US 12,396,190 B2Powerchip Semiconductor Manufacturing Corporation
- Method for splitting semiconductor wafers8 Jul 2025US 12,356,700 B2Infineon Technologies AG
- Fin field-effect transistor device having contact plugs with re-entrant profile20 May 2025US 12,310,051 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cavity contact formation using plasma doping process23 Jul 2026US 2026/0215183 A1APPLIED Materials.Inc.
- Sidewall doping method for 3d memory device9 Jul 2026US 2026/0198240 A1Chengdu Pbm Technology Ltd.
- Method and apparatus for atomic layer etching11 Jun 2026US 2026/0165050 A1Semes Co., Ltd.
- Oxidation growth modulation14 May 2026US 2026/0136850 A1APPLIED Materials.Inc.
- Wide-bandgap super junction structures for power devices5 Mar 2026US 2026/0068242 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003
- Controlled cleaving process280US 7,371,660 B2Silicon Genesis Corporation · 2008
- Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage227US 7,968,441 B2APPLIED Materials.Inc. · 2011