H10P 32/17
Characterised by the semiconductor material
Official title: {characterised by the semiconductor material}
H10P32/17 (Characterised by the semiconductor material) appears on 3,278 US grants and 2,725 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,278
- Published applications
- 2,725
- Assignees
- 759
- Inventors
- 5,386
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 28 | 0 |
| 1977 | 37 | 0 |
| 1978 | 29 | 0 |
| 1979 | 26 | 0 |
| 1980 | 28 | 0 |
| 1981 | 24 | 0 |
| 1982 | 15 | 0 |
| 1983 | 29 | 0 |
| 1984 | 18 | 0 |
| 1985 | 27 | 0 |
| 1986 | 31 | 0 |
| 1987 | 22 | 0 |
| 1988 | 40 | 0 |
| 1989 | 38 | 0 |
| 1990 | 31 | 0 |
| 1991 | 38 | 0 |
| 1992 | 29 | 0 |
| 1993 | 41 | 0 |
| 1994 | 46 | 0 |
| 1995 | 25 | 0 |
| 1996 | 30 | 0 |
| 1997 | 35 | 0 |
| 1998 | 33 | 0 |
| 1999 | 69 | 0 |
| 2000 | 67 | 0 |
| 2001 | 67 | 20 |
| 2002 | 49 | 50 |
| 2003 | 56 | 45 |
| 2004 | 38 | 53 |
| 2005 | 37 | 45 |
| 2006 | 35 | 30 |
| 2007 | 28 | 41 |
| 2008 | 19 | 51 |
| 2009 | 32 | 41 |
| 2010 | 42 | 44 |
| 2011 | 47 | 93 |
| 2012 | 47 | 84 |
| 2013 | 81 | 110 |
| 2014 | 93 | 128 |
| 2015 | 127 | 199 |
| 2016 | 195 | 233 |
| 2017 | 238 | 251 |
| 2018 | 205 | 204 |
| 2019 | 204 | 206 |
| 2020 | 207 | 198 |
| 2021 | 154 | 151 |
| 2022 | 119 | 129 |
| 2023 | 113 | 103 |
| 2024 | 96 | 105 |
| 2025 | 71 | 75 |
| 2026 | 42 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Method of manufacturing semiconductor device8 Sep 2026US 12,733,417 B2Renesas Electronics Corporation
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Large-area wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including doping of synthesized graphene1 Sep 2026US 12,727,408 B2Destination 2D Inc.
- Semiconductor device25 Aug 2026US 12,720,816 B2Mitsubishi Electric Corporation
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Semiconductor device and method for manufacturing semiconductor device17 Sep 2026US 2026/0282418 A1Mitsubishi Electric Corporation
- Semiconductor device and method for manufacturing same17 Sep 2026US 2026/0282477 A1Kabushiki Kaisha Toshiba
- Incorporation Of Arsenic Dopant In Semiconductor Lattice3 Sep 2026US 2026/0262454 A1UCL Business PLC
- Three-dimnesional memory device and method of manufacturing the same27 Aug 2026US 2026/0255601 A1Korea Advanced Institute of Science and Technology
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Method of doping semiconductors546US 8,071,451 B2Axcelis Technologies, Inc. · 2011
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992