H10P 32/171
Being group iv material
Official title: {being group IV material}
H10P32/171 (Being group iv material) appears on 2,880 US grants and 2,348 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,880
- Published applications
- 2,348
- Assignees
- 665
- Inventors
- 4,611
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 27 | 0 |
| 1977 | 35 | 0 |
| 1978 | 20 | 0 |
| 1979 | 24 | 0 |
| 1980 | 26 | 0 |
| 1981 | 22 | 0 |
| 1982 | 13 | 0 |
| 1983 | 26 | 0 |
| 1984 | 16 | 0 |
| 1985 | 22 | 0 |
| 1986 | 29 | 0 |
| 1987 | 16 | 0 |
| 1988 | 35 | 0 |
| 1989 | 29 | 0 |
| 1990 | 29 | 0 |
| 1991 | 34 | 0 |
| 1992 | 24 | 0 |
| 1993 | 34 | 0 |
| 1994 | 39 | 0 |
| 1995 | 23 | 0 |
| 1996 | 27 | 0 |
| 1997 | 33 | 0 |
| 1998 | 32 | 0 |
| 1999 | 65 | 0 |
| 2000 | 62 | 0 |
| 2001 | 63 | 17 |
| 2002 | 45 | 46 |
| 2003 | 53 | 41 |
| 2004 | 35 | 49 |
| 2005 | 34 | 41 |
| 2006 | 31 | 28 |
| 2007 | 27 | 35 |
| 2008 | 17 | 47 |
| 2009 | 30 | 35 |
| 2010 | 37 | 40 |
| 2011 | 43 | 82 |
| 2012 | 39 | 78 |
| 2013 | 77 | 95 |
| 2014 | 77 | 113 |
| 2015 | 114 | 170 |
| 2016 | 168 | 208 |
| 2017 | 213 | 221 |
| 2018 | 176 | 172 |
| 2019 | 175 | 175 |
| 2020 | 180 | 173 |
| 2021 | 135 | 125 |
| 2022 | 100 | 107 |
| 2023 | 101 | 89 |
| 2024 | 77 | 80 |
| 2025 | 56 | 53 |
| 2026 | 35 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Method of manufacturing semiconductor device8 Sep 2026US 12,733,417 B2Renesas Electronics Corporation
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Semiconductor device25 Aug 2026US 12,720,816 B2Mitsubishi Electric Corporation
- Semiconductor device including a first element structure with a column layer and a second element structure25 Aug 2026US 12,720,849 B2Rohm Co., Ltd.
- Semiconductor device and method for manufacturing same17 Sep 2026US 2026/0282477 A1Kabushiki Kaisha Toshiba
- Incorporation Of Arsenic Dopant In Semiconductor Lattice3 Sep 2026US 2026/0262454 A1UCL Business PLC
- Three-dimnesional memory device and method of manufacturing the same27 Aug 2026US 2026/0255601 A1Korea Advanced Institute of Science and Technology
- Method of manufacturing a power diode20 Aug 2026US 2026/0247641 A1STMicroelectronics International N. V.
- Transistor device and manufacturing method thereof13 Aug 2026US 2026/0239695 A1ProAsia Semiconductor Corporation
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Method of doping semiconductors546US 8,071,451 B2Axcelis Technologies, Inc. · 2011
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992