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  1. Technology classes
  2. /H · Electricity
  3. /H10 · Semiconductor devices
  4. /H10P · Generic processes or apparatus for the manufacture or treatment of devices covered
  5. /H10P 32/00 · Diffusion of dopants within, into or out of wafers, substrates or parts
  6. /H10P 32/10 · Diffusion of dopants within, into or out of semiconductor bodies or layers
  7. /H10P 32/17 · Characterised by the semiconductor material
  8. /H10P 32/171 · Being group iv material
  9. /H10P 32/173
H10P 32/173

Being semiconducting carbon

Official title: {being semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon}

H10P32/173 (Being semiconducting carbon) appears on 1 US grants and 2 published applications in this corpus.

Search patents in H10P

Where it sits

  1. HElectricity
  2. H10Semiconductor devices
  3. H10PGeneric processes or apparatus for the manufacture or treatment of devices covered
  4. H10P 32/00Diffusion of dopants within, into or out of wafers, substrates or parts
  5. H10P 32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
  6. H10P 32/17Characterised by the semiconductor material
  7. H10P 32/171Being group iv material
  8. H10P 32/173Being semiconducting carbon
Granted patents
1
Published applications
2
Assignees
1
Inventors
4
Latest grant
14 Apr 2026

Filings by year

Granted patentsPublished applications
H10P 32/173: granted patents and published applications per publication year
YearGranted patentsPublished applications
202401
202501
202610

202420252026

By publication year. 2026 runs to 8 Oct.

Recent patents

  • Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene14 Apr 2026US 12,604,687 B2Destination 2D Inc.
  • Large-area/wafer-scale cmos-compatible 2d-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene18 Sep 2025US 2025/0293048 A1Destination 2D Inc.
  • Large-area wafer-scale cmos-compatible 2d-material intercalation doping tools, processes, and methods, including doping of synthesized graphene1 Aug 2024US 2024/0258118 A1Destination 2D Inc.

Most cited

By later US patents

No patent in this class has been cited by a later US patent yet.

Top assignees

Documents
  • D2Destination 2D Inc.3

Often classified with

  • H01JElectric discharge tubes or discharge lamps3
  • H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by3

Documents that also carry the other class.

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