Large-area wafer-scale cmos-compatible 2d-material intercalation doping tools, processes, and methods, including doping of synthesized graphene

An intercalation doping apparatus which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials, the apparatus comprising:

• a reactor chamber,
• wherein single or multiple wafers or substrates are disposed within said reactor chamber,
• wherein pressure is applied to at least one surface of said single or multiple wafers or substrates within a range of 2 bar to 500 bar, and
• wherein said single or multiple wafers or substrates have a diameter or a side distance of 25 mm to 450 mm;
• a heater,
• wherein said heater applies heat to said single or multiple wafers or substrates, and
• wherein said single or multiple wafers or substrates comprise a temperature of 25° C. to 500° C.;
• and
• a dopant application apparatus,
• wherein said dopant application apparatus comprises at least valves and tubing which bring dopants from outside to within said reactor chamber,
• wherein said dopant application apparatus comprises at least a dopant crucible disposed within said reactor chamber,
• wherein said dopants comprise material in solid, liquid, or gaseous phase, and
• wherein said dopants comprise intercalation doping agents, and
• wherein said single or multiple wafers or substrates comprise single layer, few-layer, or multi-layer graphene strips.

A method of intercalation doping, where said intercalation doping comprises an apparatus which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials, said method comprising:

• providing a reactor chamber, a heater, and a dopant application apparatus;
• providing single or multiple wafers or substrates,
• wherein said single or multiple wafers or substrates are disposed within said reactor chamber,
• wherein said single or multiple wafers or substrates have a diameter or a side distance of 25 mm to 450 mm;
• applying heat to said single or multiple wafers or substrates via said heater,
• wherein said single or multiple wafers or substrates comprise a temperature of 25° C. to 500° C.,
• applying pressure to at least one surface of said single or multiple wafers or substrates within a range of 2 bar to 500 bar;
• wherein said dopant application apparatus brings into and/or hosts dopants within said reactor chamber,
• wherein said dopants comprise material in solid, liquid, or gaseous phase,
• wherein said dopants comprise intercalation doping agents,
• wherein said single or multiple wafers or substrates comprise single layer, few-layer, or multi-layer graphene strips;
• and
• processing said single or multiple wafers or substrates at said temperature and said pressure in the presence of at least one of said intercalation doping agents.