Method of manufacturing a power diode

A method of manufacturing a power diode comprising the following steps:

• a. forming a first structure comprising a first semiconductor substrate doped with a first conductivity type, and, in the first semiconductor substrate, on a side of a first surface of the first semiconductor substrate, a first doped region of a second conductivity type, opposite to the first conductivity type;
• b. forming a second structure comprising a second semiconductor substrate, and, on the second semiconductor substrate, on the side of a first surface of the second semiconductor substrate, a first layer, the second semiconductor substrate and the first layer being doped with the first conductivity type, the first layer being more heavily doped than the second semiconductor substrate;
• c. diffusing platinum atoms in the first semiconductor substrate;
• and
• d. assembling the first structure and the second structure by placing into contact a second surface of the first semiconductor substrate of the first structure, opposite to the first surface, and a second surface of the second semiconductor substrate of the second structure, opposite to the first surface,
• wherein at step d., the second semiconductor substrate is deprived of platinum atmos.