H10P 32/172
Being crystalline silicon carbide
Official title: {being crystalline silicon carbide}
H10P32/172 (Being crystalline silicon carbide) appears on 93 US grants and 98 published applications in this corpus.
Search patents in H10P- Granted patents
- 93
- Published applications
- 98
- Assignees
- 71
- Inventors
- 221
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 2 |
| 2005 | 3 | 2 |
| 2006 | 1 | 4 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 1 | 2 |
| 2010 | 1 | 1 |
| 2011 | 3 | 4 |
| 2012 | 3 | 2 |
| 2013 | 1 | 2 |
| 2014 | 4 | 3 |
| 2015 | 8 | 12 |
| 2016 | 8 | 13 |
| 2017 | 12 | 9 |
| 2018 | 4 | 6 |
| 2019 | 8 | 8 |
| 2020 | 9 | 7 |
| 2021 | 4 | 3 |
| 2022 | 3 | 5 |
| 2023 | 4 | 4 |
| 2024 | 4 | 3 |
| 2025 | 1 | 1 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- Transistor and method for fabricating the same26 May 2026US 12,641,864 B2SK hynix Inc.
- Semiconductor device with selectively grown field oxide layer in edge termination region20 Jan 2026US 12,532,488 B2Wolfspeed, Inc.
- Flexible monolithic all polycrystalline silicon carbide neural interface device and method of manufacture5 Aug 2025US 12,376,776 B1CNR Institute for Microelectronics and Microsystems
- Semiconductor device and method15 Oct 2024US 12,119,392 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing a semiconductor device and semiconductor device30 Apr 2026US 2026/0123309 A1Hitachi Energy Ltd
- Method of forming a semiconductor device including a plasma doping process1 Jan 2026US 2026/0005024 A1
- Opaque Thermal Layer for Silicon Carbide Substrates6 Mar 2025US 2025/0079186 A1APPLIED Materials.Inc.
- Semiconductor device and method28 Nov 2024US 2024/0395905 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide substrate and manufacturing method thereof7 Nov 2024US 2024/0371945 A1GlobalWafers Co., Ltd.
Most cited
By later US patents
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics56US 6,077,760 ANational Science Council · 2000
- Method for growing semiconductor film and method for fabricating semiconductor device56US 6,306,211 B1Matsushita Electric Industrial Co., Ltd. · 2001
- Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step53US 5,654,208 AABB Research Ltd. · 1997
- Method for producing a semiconductor device having a semiconductor layer of SiC43US 5,804,482 AABB Research Ltd. · 1998