Transistor and method for fabricating the same
AssigneeSK hynix Inc.
InventorJeong Hwan Song
Life of this patent
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Abstract
Transistors and methods for fabricating the transistors are disclosed. In some implementations, a transistor includes: a substrate; a gate electrode disposed over the substrate; a gate insulating layer disposed between the gate electrode and the substrate; one or more doped regions formed in the substrate; and one or more selector layers disposed over the substrate, at least one of the one or more selector layers vertically overlapping at least one of the one or more doped regions, wherein each of the one or more selector layers includes an insulating material layer and a dopant, wherein the insulating material layer includes a same material as the gate insulating layer, and the dopant is doped in the insulating material layer.
Claims12
A transistor comprising:
- a substrate;
- a gate electrode disposed over the substrate;
- a gate insulating layer disposed between the gate electrode and the substrate;
- one or more doped regions including a first dopant and formed in the substrate;
- and
- one or more selector layers disposed over the substrate, at least one of the one or more selector layers vertically overlapping at least one of the one or more doped regions,
- wherein each of the one or more selector layers includes an insulating material layer and a second dopant that is doped in the insulating material layer, wherein the insulating material layer includes a material that is the same as a material of the gate insulating layer, and
- wherein at least one of an interface portion of the selector layer adjacent to the doped region or an interface portion of the doped region adjacent to the selector layer includes the first and second dopants.
A method for fabricating a transistor, comprising:
- forming an insulating material layer over a substrate;
- forming a gate electrode over at least a first portion of the insulating material layer;
- forming a doped region at first and second regions of the substrate by implanting a first dopant into:
- the first region of the substrate adjacent to a side of the gate electrode;
- and the second region of the substrate adjacent to another side of the gate electrode;
- forming a selector layer by implanting a second dopant into at least part of the insulating material layer disposed over at least one of the first region or the second region of the substrate;
- and
- performing a heat treatment process for the first and second dopants to diffuse after the doped region is formed and after the selector layer is formed, or after the selector layer is formed.
Dependencies are inferred from the claim text.