Opaque Thermal Layer for Silicon Carbide Substrates

Abstract

A method for thermally processing an optically nonopaque substrate using radiant energy. In some embodiments, the method includes flipping the optically nonopaque substrate to expose a non-structure side, depositing an opaque thermal layer on the non-structure side of the optically nonopaque substrate where the opaque thermal layer has a uniform thickness, flipping the optically nonopaque substrate to expose the structure side, and thermally processing the optically nonopaque substrate in excess of approximately 900 degrees Celsius. In some embodiments, the opaque thermal layer is comprised of amorphous carbon, multiple layers of amorphous carbon with adjacent layers of the multiple layers having different optical properties, or alternating layers of different materials where a first layer of the alternating layers is comprised of amorphous carbon material and where a second layer of the alternating layers is comprised of amorphous silicon (Si)-based material.

Dependencies are inferred from the claim text.