Norstel AB
Linköping, SE· latest recorded location
Norstel AB is named on 7 US grants and 7 published applications in this corpus. Its most frequent classification is C30B (Single-crystal growth).
- Granted patents
- 7
- Published applications
- 7
- Inventors
- 11
- Granted in 2026 so far
- 0
- Most recent grant
- 12 Aug 2014
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 2 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 2 | 2 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 1 | 0 |
By publication year.
Technology areas
Share of 14 documents
- C30BSingle-crystal growth14
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered10
- Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10
- H10DInorganic electric semiconductor devices8
- Y10TTechnical subjects covered by former us classification2
Recent patents
- Lightly doped silicon carbide wafer and use thereof in high power devices12 Aug 2014US 8,803,160 B2
- Homoepitaxial growth of SiC on low off-axis SiC wafers23 Jul 2013US 8,492,772 B2
- Lightly doped silicon carbide wafer and use thereof in high power devices17 Jan 2012US 8,097,524 B2
- Homoepitaxial growth of SiC on low off-axis SiC wafers12 May 2009US 7,531,433 B2
- Lightly doped silicon carbide wafer and use thereof in high power devices27 Jan 2009US 7,482,068 B2
- Lightly doped silicon carbide wafer and use thereof in high power devices19 Apr 2012US 2012/0091471 A1
- Homoepitaxial growth of sic on low off-axis sic wafers17 Sep 2009US 2009/0230406 A1
- Lightly doped silicon carbide wafer and use thereof in high power devices7 May 2009US 2009/0114924 A1
- Device and method to producing single crystals by vapour deposition26 Jun 2008US 2008/0149020 A1
- Lightly doped silicon carbide wafer and use thereof in high power devices29 Jun 2006US 2006/0137600 A1
Most cited
By later US patents
- Homoepitaxial growth of SiC on low off-axis SiC wafers15US 7,531,433 B22009
- High resistivity silicon carbide single crystal13US 7,018,597 B22006
- Device and method for producing single crystals by vapor deposition13US 7,361,222 B22008
- Homoepitaxial growth of SiC on low off-axis SiC wafers2US 8,492,772 B22013
- Lightly doped silicon carbide wafer and use thereof in high power devices1US 7,482,068 B22009