Device and method for producing single crystals by vapor deposition
AssigneeNorstel AB
InventorsErik Janzén, Peter Råback, Alexandre Ellison
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Abstract
A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.
Claims16
A method for growing large, single polytype, compound crystals of one of a) silicon carbide, b) a group III-nitride c) alloys thereof, the method comprising:
- providing, in a heated growth enclosure comprising a seed crystal, a mixture of vapor species containing at least the elements of the compound crystal, in such a way that, at least one of the elements is continuously fed into the enclosure through an opening upstream of a growth surface of said crystal,
- removing from the enclosure through an opening downstream of the growth surface of said crystal a continuous flow of remaining vapor species not having been deposited under conditions yielding to growth of said crystal, and
- providing in the enclosure an etching gas flow containing at least one halogen element, in such a way that, said gas flow is heated and decreases a deposition rate of solid phases downstream of the growth surface of said crystal.
Dependencies are inferred from the claim text.