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US 7,018,597 B2Granted
High resistivity silicon carbide single crystal
AssigneeNorstel AB
InventorsAlexandre Ellison, Nguyen Tien Son, Björn Magnusson, Erik Janzén
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Abstract
The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.
Claims21
A semi-insulating silicon carbide single crystal having a resistivity of at least 105 Ω·cm at 25° C., comprising:
- at least one deep impurity;
- and
- at least one deep intrinsic defect,
- wherein a concentration of the at least one deep impurity is sufficient to affect the resistivity of the crystal by compensating either shallow donors or shallow acceptors, but said concentration being lower than the concentration of deep intrinsic defects.
1 more element
Dependencies are inferred from the claim text.