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US 7,531,433 B2Granted
Homoepitaxial growth of SiC on low off-axis SiC wafers
AssigneeNorstel AB
InventorsAlexandre Ellison, Christer Hallin, Björn Magnusson, Peder Bergman
Life of this patent
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Abstract
A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.
Claims14
A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as said substrate, comprising:
- growing said layers on a surface of the SiC substrate, wherein said surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree,
- starting an homoepitaxial growth by forming a boundary layer with a thickness up to 1 μm, and
- forming a homoepitaxial device layer wherein said boundary layer is formed in an atmosphere of lower supersaturation than when forming the homoepitaxial device layer and at a C/Si ratio above 1.
Dependencies are inferred from the claim text.