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US 2006/0137600 A1Published application
Lightly doped silicon carbide wafer and use thereof in high power devices
AssigneesNorstel AB, SiCED Electronics Development GmbH & Co. KG
InventorsAlexandre Ellison, Bjorn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner, Peter Friedrichs
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Abstract
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.
Claims31
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity, wherein the crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.
A semiconductor device comprising:
- a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side,
- a first contact electrode arranged at the front side of the drift zone,
- a control region arranged at the front side and controlling an injection of carriers of at least the first conductivity type into the drift zone,
- a second contact electrode at the backside of the drift zone,
- whereas the drift zone is arranged to carry a carrier flow between the first and the second contact electrodes,
- wherein,
- the drift zone comprises a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
4 more elements
Dependencies are inferred from the claim text.