Back to results
US 7,482,068 B2Granted
Lightly doped silicon carbide wafer and use thereof in high power devices
AssigneesNorstel AB, SiCED Electronics Development GmbH & Co. KG
InventorsAlexandre Ellison, Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner, Peter Friedrichs
Life of this patent
Estimating the term…
Abstract
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.
Claims12
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity, wherein the crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature, wherein the single crystal is a wafer.
Dependencies are inferred from the claim text.