Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
AssigneeABB Research Ltd.
InventorsChristopher Harris, Andrei Konstantinov, Erik Janzen
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Abstract
The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.
Claims12
A method for producing a semiconductor device having a semiconductor layer of SiC, said method comprising the steps of
- a) applying a mask on at least a portion of said SiC layer to coat a first portion of said SiC layer leaving a second portion thereof uncoated,
- b) applying a heat treatment to said SiC layer,
- c) supplying dopants to the SiC layer during said heat treatment for diffusion of said dopants into the SiC layer at said second portion thereof for doping the SiC layer, and wherein said mask is made of a material selected from the group consisting of crystalline AlN as the only component and AlN as a major component of a crystalline alloy constituting said material.
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask preventing diffusion of impurities into areas coated by said mask when diffusing into said SiC layer in production of a semiconductor device having a semiconductor layer of said SiC.
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask for preventing diffusion of impurities into SiC layer areas coated by said mask when annealing said SiC layer after ion implantation in production of a semiconductor device having a semiconductor layer of said SiC.
Dependencies are inferred from the claim text.