Method for growing semiconductor film and method for fabricating semiconductor device

A method for fabricating a semiconductor device, comprising the steps of:

• a) growing a doped semiconductor layer epitaxially over a substrate by supplying, onto the substrate, not only a source gas but also a gas containing a dopant by pulse flow at least once;
• b) forming a gate electrode on the doped semiconductor layer such that the gate electrode makes Schottky contact with the doped semiconductor layer;
• and
• c) forming source and drain electrodes on right- and left-hand sides of the gate electrode over the doped semiconductor layer such that the source and drain electrodes make ohmic contact with the doped semiconductor layer.

A method for growing a semiconductor film epitaxially on a single crystal region of a substrate, the method comprising the steps of:

• a) placing the substrate within a chamber;
• and
• b) forming the semiconductor film by supplying not only a source gas, which contains a constituent of the semiconductor film to be formed, but also an additive gas containing dopant atoms into the chamber after the step a) has been performed, the additive gas being supplied through a pulse valve at least once,
• wherein in the step b), a dopant concentration profile of the film is controlled by adjusting a pulse duration, the pulse duration being the length of an interval during which the additive gas is supplied through the pulse valve.