Semiconductor device with selectively grown field oxide layer in edge termination region

An electronic device, comprising:

• a drift region having a first conductivity type;
• an edge termination region in the drift region;
• a guard ring on the drift region of the edge termination region, the guard ring having a second conductivity type;
• and
• a passivation layer on the guard ring and on the drift region in the edge termination region, the passivation layer having a first thickness over the guard ring and a second thickness over surface of the drift region, wherein the first thickness is greater than the second thickness.

A semiconductor device, comprising:

• a drift region having a first conductivity type;
• an active region in the drift region;
• and
• a termination region in the drift region adjacent to the active region, the termination region comprising:
• a guard ring on the drift region, the guard ring having a second conductivity type;
• and
• a passivation layer over at least the guard ring, wherein the passivation layer extends below a plane of a top surface of the drift region at the guard ring.