Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics

A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, suitable for a first-type silicon substrate, wherein a native oxide layer is formed on said first-type silicon substrate, comprising:

• removing said native oxide layer;
• forming a first graded reactant-gas composition ratio layer on said first-type silicon substrate;
• forming a second-type single-crystal silicon carbide layer on said first graded reactant-gas composition ratio layer;
• forming a second graded reactant-gas composition ratio layer on said second-type single-crystal silicon carbide layer;
• forming a second-type single-crystal silicon layer on said second graded reactant-gas composition ratio layer;
• and
• forming a first metal layer on said second-type single-crystal silicon layer and a second metal layer on said first-type silicon substrate.

A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, suitable for a first-type silicon substrate, wherein a native oxide layer is already formed on said first-type silicon substrate, comprising:

• removing said native oxide layer;
• forming a first graded reactant-gas composition ratio layer on said first-type silicon substrate;
• forming a first second-type single-crystal silicon carbide layer on said first graded reactant-gas composition ratio layer;
• forming a second graded reactant-gas composition ratio layer on said first second-type single-crystal silicon carbide layer;
• forming a first-type single-crystal silicon layer on said second graded reactant-gas composition ratio layer;
• forming a third graded reactant-gas composition ratio layer on said first-type single-crystal silicon layer;
• forming a second second-type single-crystal silicon carbide layer on said third graded reactant-gas composition ratio layer;
• and
• forming a first metal layer on said second second-type single-crystal silicon carbide layer and a second metal layer on said first-type silicon substrate.

A structure of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, suitable for a first-type silicon substrate, comprising:

• a graded reactant-gas composition ratio layer formed on said first-type silicon substrate;
• a second-type single-crystal silicon carbide layer formed on said graded reactant-gas composition ratio layer;
• and
• a first metal layer formed on said second-type single-crystal silicon carbide layer and a second metal layer formed on said first-type silicon substrate.

A structure of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, suitable for a first-type silicon substrate, comprising:

• a first graded reactant-gas composition ratio layer formed on said first-type silicon substrate;
• a second-type single-crystal silicon carbide layer formed on said first graded reactant-gas composition ratio layer;
• a second graded reactant-gas composition ratio layer formed on said second-type single-crystal silicon carbide layer;
• a second-type single-crystal silicon layer formed on said second graded reactant-gas composition ratio layer;
• and
• a first metal layer formed on said second-type single-crystal silicon layer and a second metal layer formed on said first-type silicon substrate.

A structure of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, suitable for a first-type silicon substrate, comprising:

• a first graded reactant-gas composition ratio layer formed on said first-type silicon substrate;
• a first second-type single-crystal silicon carbide layer formed on said first graded reactant-gas composition ratio layer;
• a second graded reactant-gas composition ratio layer formed on said first second-type single-crystal silicon carbide layer;
• a first-type single-crystal silicon layer formed on said second graded reactant-gas composition ratio layer;
• a third graded reactant-gas composition ratio layer formed on said first-type single-crystal silicon layer;
• a second second-type single-crystal silicon carbide layer formed on said third graded reactant-gas composition ratio layer;
• and
• a first metal layer formed on said second second-type single-crystal silicon carbide layer and a second metal layer formed on said first-type silicon substrate.