H10P 32/174
Being group iii-v material
Official title: {being Group III-V material}
H10P32/174 (Being group iii-v material) appears on 260 US grants and 228 published applications in this corpus.
Search patents in H10P- Granted patents
- 260
- Published applications
- 228
- Assignees
- 137
- Inventors
- 592
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 6 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 7 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 5 | 3 |
| 2002 | 3 | 4 |
| 2003 | 4 | 3 |
| 2004 | 3 | 4 |
| 2005 | 2 | 4 |
| 2006 | 3 | 2 |
| 2007 | 1 | 4 |
| 2008 | 2 | 5 |
| 2009 | 2 | 3 |
| 2010 | 5 | 3 |
| 2011 | 4 | 5 |
| 2012 | 5 | 5 |
| 2013 | 1 | 7 |
| 2014 | 8 | 8 |
| 2015 | 8 | 16 |
| 2016 | 14 | 16 |
| 2017 | 22 | 22 |
| 2018 | 18 | 20 |
| 2019 | 12 | 20 |
| 2020 | 20 | 15 |
| 2021 | 14 | 11 |
| 2022 | 8 | 9 |
| 2023 | 5 | 7 |
| 2024 | 7 | 12 |
| 2025 | 15 | 18 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and preparation method thereof7 Jul 2026US 12,677,448 B2Enkris Semiconductor, Inc.
- Superjunction devices formed by field assisted diffusion of dopants19 May 2026US 12,635,191 B2Lawrence Livermore National Security, LLC
- Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions7 Apr 2026US 12,598,927 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Semiconductor device and method of forming the same2 Dec 2025US 12,490,446 B2United Microelectronics Corp.
- Semiconductor device having improved p-type doped nitride-based semiconductor layer and method for manufacturing the same2 Dec 2025US 12,490,482 B2Innoscience (Suzhou) Technology Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device17 Sep 2026US 2026/0282418 A1Mitsubishi Electric Corporation
- Diffusion suppression in high-temperature annealing of nitrides12 Mar 2026US 2026/0076116 A1The Government of the United States of America, as represented by the Secretary of the Navy
- High electron mobility transistor and fabrication method thereof18 Dec 2025US 2025/0386570 A1Vanguard International Semiconductor Corporation
- Semiconductor structure and manufacturing method thereof4 Dec 2025US 2025/0372383 A1Enkris Semiconductor, Inc.
- Manufacturing method for nitride semiconductor device20 Nov 2025US 2025/0357141 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface93US 8,890,264 B2Intel Corporation · 2014
- Generation of ohmic contacts on indium phosphide87US 4,662,063 AThe United States of America as represented by the Department of the Navy · 1987
- High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe83US 6,251,755 B1International Business Machines Corporation · 2001
- Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate50US 5,700,714 AOki Electric Industry Co., Ltd. · 1997
- Epitaxially grown p-type diffusion source for photodiode fabrication45US 6,489,635 B1Sensors Unlimited, Inc. · 2002