Diffusion suppression in high-temperature annealing of nitrides

Abstract

A nitride semiconductor and method of making the same are provided. In embodiments, a method for manufacturing a nitride semiconductor includes: providing a nitride semiconductor material including at least one main dopant defining a p-type portion; doping the nitride semiconductor material with at least one co-dopant co-located with the main dopant, wherein the co-dopant reduces gas-enhanced diffusion of the main dopant by a component in an ambient gas during annealing; and annealing the nitride semiconductor material under pressure, thereby producing an annealed nitride semiconductor material with an activated main dopant. In implementations, a nitride semiconductor is produced including an annealed nitride semiconductor material doped with magnesium (Mg) and oxygen (O) in an activated p-type portion, wherein the Mg and O are present at a ratio of 2:1.

Dependencies are inferred from the claim text.