High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, John Joseph Ellis-Monaghan, James Albert Slinkman
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Abstract
The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.
Claims27
A method for incorporating impurity atoms into a semiconductor substrate, said method comprising the steps of:
- (a) providing a semiconductor substrate having a dopant/bandgap source material layer formed on one surface thereof, said dopant/bandgap source material layer having impurity atoms therein;
- and
- (b) physically contacting said structure provided in (a) with an atomic force probe under conditions such that the impurity atoms from the dopant/bandgap source material layer are mechanically driven into the semiconductor substrate.
Dependencies are inferred from the claim text.