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US 4,662,063 AGranted
Generation of ohmic contacts on indium phosphide
AssigneeThe United States of America as represented by the Department of the Navy
InventorsDavid A. Collins, Derek L. Lile
Life of this patent
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Abstract
A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.
Claims11
A method of forming low resistance ohmic contacts on indium phosphide comprising the steps of:
- forming first and second regions of contact metal on the surface of said indium phosphide;
- passing a non-arcing electric current through and between said regions of contact metal for a sufficiently long time and at a sufficiently high current amplitude so as to form p.sup.+ regions in said indium phosphide in the regions beneath said regions of metal.
Dependencies are inferred from the claim text.