Semiconductor device having improved p-type doped nitride-based semiconductor layer and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming a first nitride-based semiconductor layer;
• forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer to form a heterojunction therebetween;
• forming a blanket p-type doped nitride-based semiconductor layer above the second nitride-based semiconductor layer;
• forming a hydrogen absorption layer above the blanket p-type doped nitride-based semiconductor layer;
• varying a process temperature such that hydrogen in the blanket p-type doped nitride-based semiconductor layer is absorbed by the hydrogen absorption layer;
• removing the hydrogen absorption layer;
• patterning the blanket p-type doped nitride-based semiconductor layer to form a p-type doped nitride-based semiconductor layer;
• and
• forming a first electrode in contact with the p-type doped nitride-based semiconductor layer;
• wherein the p-type doped nitride-based semiconductor layer has a hydrogen concentration which decrementally decreases along a direction pointing from the bottom surface toward a top surface of the p-type doped nitride-based semiconductor layer.

A method for manufacturing a semiconductor device, comprising:

• forming a first nitride-based semiconductor layer;
• forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer to form a heterojunction therebetween;
• forming a blanket p-type doped nitride-based semiconductor layer above the second nitride-based semiconductor layer;
• forming a hydrogen absorption layer above the blanket p-type doped nitride-based semiconductor layer;
• varying a process temperature such that hydrogen in the blanket p-type doped nitride-based semiconductor layer is absorbed by the hydrogen absorption layer;
• removing the hydrogen absorption layer;
• patterning the blanket p-type doped nitride-based semiconductor layer to form a p-type doped nitride-based semiconductor layer;
• and
• forming a first electrode in contact with the p-type doped nitride-based semiconductor layer;
• wherein at least one hydrogen absorption island remains on the p-type doped nitride-based semiconductor layer after removing the hydrogen absorption layer.