H10P 14/6348
Liquid ald
Official title: {Liquid ALD}
H10P14/6348 (Liquid ald) appears on 10 US grants and 15 published applications in this corpus.
Search patents in H10P- Granted patents
- 10
- Published applications
- 15
- Assignees
- 11
- Inventors
- 62
- Latest grant
- 21 Jan 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 1 |
| 2019 | 3 | 4 |
| 2020 | 0 | 0 |
| 2021 | 2 | 3 |
| 2022 | 2 | 1 |
| 2023 | 1 | 1 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor processing chamber to accommodate parasitic plasma formation21 Jan 2025US 12,205,845 B2APPLIED Materials.Inc.
- Semiconductor cleaning equipment and method for cleaning through vias using the same26 Dec 2023US 11,854,794 B2National Center for Advanced Packaging Co., Ltd.
- Methods for enhancing selectivity in SAM-based selective deposition29 Nov 2022US 11,515,155 B2APPLIED Materials.Inc.
- Integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for area selective-atomic layer deposition24 May 2022US 11,342,176 B2The Regents of the University of Michigan
- High-k metal gate and method for fabricating the same8 Jun 2021US 11,031,302 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus6 Aug 2026US 2026/0226615 A1Kokusai Electric Corporation
- Methods for filling recessed features on a substrate with a flowable layer structure26 Feb 2026US 2026/0060013 A1ASM IP Holding B. V.
- Memory cell sealant material in a three-dimensional memory array16 Oct 2025US 2025/0323110 A1Micron Technology, Inc.
- Film formation method and film formation device1 Aug 2024US 2024/0254617 A1Tokyo Electron Limited
- Methods for depositing gap-filling fluids and related systems and devices21 Sep 2023US 2023/0298885 A1ASM IP Holding B. V.
Most cited
By later US patents
- High-K metal gate and method for fabricating the same3US 10,361,133 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Semiconductor device and method for forming the same3US 10,431,679 B2Fujian Jinhua Integrated Circuit Co., Ltd. · 2019
- Semiconductor device and method for forming the same1US 10,505,039 B2Fujian Jinhua Integrated Circuit Co., Ltd. · 2019
- Methods for enhancing selectivity in SAM-based selective deposition1US 10,950,433 B2APPLIED Materials.Inc. · 2021