High-k metal gate and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJu-Li Huang, Chih-Long Chiang, Kuo Bin Huang, Ming-Hsi Yeh, Ying-Liang Chuang
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Abstract
Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- a first gate structure over the substrate, wherein the first gate structure comprises:
- a first gate dielectric layer over the substrate;
- a first barrier layer over the first gate dielectric layer;
- an oxide layer over the first barrier layer;
- a self-assembled monolayer on the oxide layer, the self-assembled monolayer comprising a metal;
- and
- a first metal gate material over the self-assembled monolayer.
A semiconductor device, comprising:
- a substrate;
- a first gate structure over the substrate, wherein the first gate structure comprises:
- a first gate dielectric layer over the substrate;
- a first barrier layer over the first gate dielectric layer;
- an oxide layer over the first barrier layer;
- a self-assembled monolayer on the oxide layer, the self-assembled monolayer comprising a metal;
- and
- a first gate electrode over the self-assembled monolayer;
- and
- a second gate structure over the substrate, wherein the second gate structure comprises:
- a second gate dielectric layer over the substrate;
- a second barrier layer over the second gate dielectric layer, wherein the first barrier layer and the second barrier layer comprise a same barrier material;
- and
- a second gate electrode directly on the second barrier layer, wherein the first gate electrode and the second gate electrode comprise a same material structure.
A semiconductor device, comprising:
- a fin extending from a substrate;
- a dielectric structure over the fin;
- a first gate structure extending through the dielectric structure to the fin, wherein the first gate structure comprises:
- a gate dielectric layer over a surface of the fin and sidewalls of the dielectric structure;
- a barrier layer over the gate dielectric layer, the barrier layer extending over the sidewalls of the dielectric structure;
- an oxide layer over the barrier layer, oxide barrier layer extending over the sidewalls of the dielectric structure;
- one or more self-assembled monolayers on the oxide layer, each of the one or more self-assembled monolayers comprising a metal oxide, the one or more self-assembled monolayers extending over the sidewalls of the dielectric structure;
- and
- a metal gate material over the self-assembled monolayer.
Dependencies are inferred from the claim text.