Semiconductor device and method for forming the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Yu-Cheng Tung, Fu-Che Lee
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and at least a gate trench extending along a first direction formed in the substrate. A gate dielectric layer is formed conformally covering the gate trench. A gate metal is formed on the gate dielectric layer and filling the gate trench. A plurality of intervening structures are arranged along the first direction in a lower portion of the gate trench and disposed between the gate metal and the gate dielectric layer.
Claims8
A semiconductor structure, comprising:
- a substrate having at least a gate trench extending along a first direction formed therein, wherein the gate trench comprises a plurality of first regions having a depth d1 and a plurality of second regions having a depth d2 arranged alternatingly along the first direction;
- a gate dielectric layer conformally covering the gate trench;
- a gate metal formed on the gate dielectric layer and partially filling the gate trench;
- and
- a plurality of intervening structures arranged separately along the first direction in a lower portion of the gate trench and disposed between the gate metal and the gate dielectric layer, wherein each of the intervening structures is disposed in one of the second regions.
Dependencies are inferred from the claim text.