Semiconductor processing chamber to accommodate parasitic plasma formation

A semiconductor processing system comprising:

• a chamber body;
• a pedestal configured to support a semiconductor substrate;
• a faceplate, wherein the chamber body, the pedestal, and the faceplate define a processing region, and wherein the faceplate is coupled with an RF power source;
• a remote plasma unit coupled at electrical ground;
• and
• a discharge tube extending from the remote plasma unit towards the faceplate, wherein the discharge tube defines a central aperture, wherein:
• the discharge tube is electrically coupled with each of the faceplate and the remote plasma unit;
• the discharge tube comprises ferrite extending about the central aperture of the discharge tube;
• the discharge tube comprises a first end proximate the remote plasma unit and a second end proximate the faceplate;
• the discharge tube defines an annular volume within the discharge tube and about the central aperture;
• and
• the ferrite is disposed within the annular volume;
• and
• an insulator disposed within the annular volume and positioned between the ferrite and the second end of the discharge tube.