High-K metal gate and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJu-Li Huang, Chih-Long Chiang, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo Bin Huang
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Abstract
Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.
Claims20
A method of forming a semiconductor device, comprising:
- forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer;
- and
- forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.
A method of forming a semiconductor device, comprising:
- providing a substrate comprising a first device region and a second device region, each of the first and second device regions comprising a dielectric layer over the substrate, the dielectric layer having a trench, the substrate having a fin structure extending vertically from a surface of the substrate, the trench extending over the fin structure, and a source/drain region disposed adjacent to opposing sides of the trench;
- forming a gate dielectric layer in the trench in the first and second device regions;
- forming a barrier layer over the gate dielectric layer in the trench in the first and second device regions;
- forming an oxide layer over the barrier layer in the trench in the first and second device regions;
- removing the oxide layer from the trench in the first device region;
- and
- forming a self-assembled monolayer over the oxide layer in the trench in the second device region, the self-assembled monolayer comprising a metal.
A method of forming a semiconductor device, comprising:
- forming a first fin;
- forming a gate dielectric layer over the first fin;
- forming a barrier layer over the gate dielectric layer over the first fin;
- forming an oxide layer over the barrier layer over the first fin;
- forming one or more self-assembled monolayers over the oxide layer over the first fin, the one or more self-assembled monolayers comprising a metal;
- and
- forming one or more metal layers over the one or more self-assembled monolayers.
Dependencies are inferred from the claim text.